features z for general af applications z high collector current z high current gain z low collector-emitter saturation voltage z complementary type: bcx68 (npn) maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -25 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector dissipation 0.8 w t j junction temperature 150 t stg storage temperature -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a , i e =0 -25 v collector-emitter breakdown voltage v (br)ceo i c =-30ma , i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-1 a, i c =0 -5 v collector cut-off current i cbo v cb =-25v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a h fe (1) 1) v ce =-1v, i c =-500ma 85 85 100 160 375 160 250 375 h fe(2) 1) v ce =-10v, i c =-5ma 50 dc current gain BCX69 BCX69-10 BCX69-16 BCX69-25 h fe(3) 1) v ce =-1v, i c =-1a 60 collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-100ma -0.5 v base-emitter voltage v be(on) 1) i c =-5ma, v ce =-10v i c =-1a, v ce =-1v -0.6 -1 v transition frequency f t v ce =-5v, i c =-100ma f=20mhz 100 mhz 1) pulse test: t =300s, d = 2% marking: BCX69=ce1 BCX69-10=cf1 BCX69-16=cg1 BCX69-25=ch1 sot-89 1. base 2. collector 3. emitter 1 2 3 BCX69 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu BCX69
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